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PUMD13 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 100 300mW/0.3W SOT-363/SC-88/SC70-6 marking 3T switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.1
Q2基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.1
直流电流增益hFE DC Current Gain(hFE)100
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures • NPN/PNP resistor-equipped transistors; • Built-in bias resistors • Reduces component count • Reduces pick and place costs • Simplifies circuit design APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs
描述与应用特点 •NPN/ PNP电阻配备晶体管; •内置偏置电阻 •减少了元件数量 •减少取放成本 •简化电路设计 应用 •低电流外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入
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