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QS6K1 Complex FET 30V 10A SOT-153/SOT23-5/TSMT5 marking K01 power switch DC/DC converter

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Product description
最大源漏极电压Vds
Drain-Source Voltage		30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		10A
源漏极导通电阻Rds
Drain-Source On-State Resistance		364mΩ@ VGS =2.5V, ID =1A
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.5~1.5V
耗散功率Pd
Power Dissipation		1.25W
Description & Applications2.5V Drive Nch+Nch MOS FET Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT6). Application Power switching, DC / DC converter.
描述与应用2.5V驱动N沟道+ N沟道MOS FET 特点 低导通电阻。 内置G-S的保护二极管。 小和表面贴装封装（TSMT6）。 应用 电源开关，DC / DC变换器。
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