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RHK005N03 MOSFET N-Channel 30V 500mA/0.5A SOT-23/SC-59 marking KU high output power

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.55Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-2.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & Applications4V Drive Nch MOS FET Silicon N-channel MOS FET Features Low On-resistance. High speed switching.
描述与应用4V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。 高速开关
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