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RN1544-A NPN+NPN Complex Bipolar Digital Transistor 50V 300mA 200~700 300mW/0.3W SOT-153/SMV/SOT23-5 marking 44A switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)20V
集电极连续输出电流IC Collector Current(IC)300mA
Q1基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q1电阻比(R1/R2) Q1 Resistance Ratio
Q2基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q2电阻比(R1/R2) Q2 Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)200~700
截止频率fT Transtion Frequency(fT)30MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) • For use in Muting and Switching Applications • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
描述与应用特点 •东芝晶体管的硅NPN外延型(PCT进程)(偏置电阻内置晶体管)用于静音和开关应用 •发射极基极电压高:VEBO=25 V(最大值) •将偏置电阻晶体管,减少了部件数量。减少零件数,使制造更加紧凑的设备和节省组装成本
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