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RN2111 PNP Bipolar Digital Transistor (BRT) -50V -100mA/-0.1A 120~400 0.1W/100mW SOT-523/SC-75/SSM marking YM switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)120~400
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Fewer parts and simplified manufacturing process • Complementary to RN1110~RN1111 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •晶体管的硅PNP外延型(PCT工艺) •内置偏置电阻 •简化电路设计更少的部件和简化制造工艺 •互补RN1110~~ RN1111 应用 •开关,逆变电路,接口电路和驱动器电路应用
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