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RN2505 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=80 300mW/0.3W R1=2.2KΩ R2=47KΩ SOT-153/SMV/SOT23-5 marking YE switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA/-0.1A
 Input Resistance(R1)  2.2KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.0468
DC Current Gain(hFE)  80
Transtion Frequency(fT)  200MHZ
Power Dissipation (Pd)  300MW/0.3W
Description & Applications
Switching, Inverter Circuit, Interface Circuit 
and Driver Circuit Applications 
* Including two devices in SMV (super mini type with 5 leads) 
* With built-in bias resistors 
* Simplify circuit design 
* Reduce a quantity of parts and manufacturing process 
* Complementary to RN1501 to RN1506 
 
Technical Documentation Download Read Online

 

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