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RN2963FS PNP+PNP Complex Bipolar Digital Transistor -20V -50mA HEF=100 R1=R2=22KΩ 50mW SOT-963/FS6 marking H5 switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -50MA
 Input Resistance(R1)  22KΩ
Base-Emitter Resistance(R2) 22KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  1
DC Current Gain(hFE)  100
Transtion Frequency(fT)  
Power Dissipation (Pd)  50MW
Description & Applications  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) 
 
Switching, Inverter Circuit, Interface Circuit and 
Driver Circuit Applications 
 
• Two devices are incorporated into a fine pitch small mold (6-pin) 
package. 
• Incorporating a bias resistor into a transistor reduces parts count. 
Reducing the parts count enables the manufacture of ever more 
compact equipment and lowers assembly cost. 
Technical Documentation Download Read Online

 

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