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RN4983FS NPN+PNP Complex Bipolar Digital Transistor 20V/-20V 50mA/-50mA HEF=100 R1=R2=22KΩ 50mW SOT-963/FS6 marking 6C switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 20V/-20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 20V/-20V
集电极连续输出电流IC Collector Current(IC) 50mA/-50mA
Q1基极输入电阻R1 Input Resistance(R1) 22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 100
截止频率fT Transtion Frequency(fT)  
耗散功率Pc Power Dissipation 50mW
Description & Applications Features • TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type(PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
描述与应用 特点 •东芝晶体管的硅NPN·PNP外延型的(PCT进程)内置-在晶体管的(偏置电阻) •的有两台设备成一个罚款的俯仰小型模具(6 - 针)程序包注册成立。 •将偏置电阻晶体管,减少了部件数量。减少部件数量,能够制造更加紧凑的设备和降低装配成本。 应用 •开关,逆变电路,接口电路和驱动器电路应用
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