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RN49A4JE NPN+PNP Complex Bipolar Digital Transistor -50V/40V -100mA/100mA 120/300 100mW/0.1W SOT-563/ES6 marking AW switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V/40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V/40V
集电极连续输出电流IC Collector Current(IC)-100mA/100mA
Q1基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q1电阻比(R1/R2) Q1 Resistance Ratio
Q2基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q2电阻比(R1/R2) Q2 Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)120/300
截止频率fT Transtion Frequency(fT)250MHz/200MHz
耗散功率Pc Power Dissipation100mW/0.1W
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) • Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •东芝晶体管的硅PNP NPN外延式(PCT程序)(偏置电阻内置晶体管) •两个设备都纳入一个超超级迷你(6针)封装。 •将偏置电阻晶体管,减少了部件数量。减少零件计数使能越来越紧凑的设备和制造,节省组装成本。 应用 •开关,逆变电路,接口电路和驱动器电路应用
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