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RT2N04M NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 50 150mW/0.15W SOT-353/SC-88A/SC70-5 marking N2 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)50
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation150mW/0.15W
Description & ApplicationsFeatures • COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE • Built-in bias resistor ( R1=22 KΩ/Ohm , R2=22KΩ/Ohm ) • Mini package for easy mounting Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •复合晶体管,电阻开关中的应用硅NPN外延型 •内置偏置电阻(R1=22千欧,R2=22KΩ/Ohm) •易于安装的小型封装 应用 •开关,逆变电路,接口电路和驱动器电路应用
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