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RTL020P02 MOSFET P-Channel -20V -2A 250mohm SOT-363 marking WU low on-resistance high-speed switch low voltage drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-12V
最大漏极电流Id
Drain Current		-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		250mΩ@ VGS = -2.5V, ID = -1A
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.7~-2V
耗散功率Pd
Power Dissipation		1W
Description & Applications2.5V Drive Pch MOS FET Features 1) Low on-resistance. 2) High power package. 3) High speed switching. 4) Low voltage drive. Applications DC-DC converter
描述与应用2.5V驱动P沟道MOS FET 特点 1）低导通电阻。 2）高功率封装。 3）高速开关。 4）低电压驱动。 应用 DC-DC转换
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