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S9015 PNP transistors(BJT) -50V -100mA/-0.1A 200~1000 -300mV/-0.3V SOT-23 marking M6 low-frequency/low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−45V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
200~1000
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsSilicon Epitaxial Planar Transistor FEATURES Complementary To S9014. Lead-free Excellent HFE Linearity. APPLICATIONS Low frequency , low noise amplifier.
描述与应用硅外延平面晶体管 特点 互补S9014。 无铅 优秀HFE线性。 应用 低频率,低噪声放大器。
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