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SI1905DL Complex FET -8V -570mA/-0.57A SOT-363/SC70-6 marking Q8

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-570mA/-0.57A
源漏极导通电阻Rds
Drain-Source On-State Resistance
1.2Ω@ VGS = -1.8V, ID = -200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
270mW/0.27W
Description & ApplicationsDual P-Channel 1.8-V (G-S) MOSFET
描述与应用双P沟道1.8-V(G-S)的MOSFET
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