SI2304BDS-T1-E3 MOSFET N-Channel 30V 3.2A SOT-23/SC-59 marking L4 low on-resistance/low-voltage drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI2304BDS-T1-E3 MOSFET N-Channel 30V 3.2A SOT-23/SC-59 marking L4 low on-resistance/low-voltage drive

Model：SI2304BDS-T1-E3
Mark / screen / code / typing：L4
Manufacturer：
Date Code：5 05+NOPB300
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	3.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.105Ω/Ohm @2A,4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	1.5-3.0V
耗散功率Pd Power Dissipation	1.08w
Description & Applications	N-Channel 1.25-W, 2.5-V MOSFET
描述与应用	N沟道1.25-W， 2.5 V MOSFET

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