SI3434DV MOSFET N-Channel 30V 4.6A SOT-163/SOT23-6/TSOP-6 marking ultra highspeed switch/built-in gate protection-diode/DMOS|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI3434DV MOSFET N-Channel 30V 4.6A SOT-163/SOT23-6/TSOP-6 marking ultra highspeed switch/built-in gate protection-diode/DMOS

Model：SI3434DV
Mark / screen / code / typing：
Manufacturer：
Date Code：05+
Package：SOT-163/SOT23-6/TSOP-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V
最大漏极电流Id Drain Current	4.6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	50mΩ@ VGS =2.5V, ID =2A
开启电压Vgs（th） Gate-Source Threshold Voltage	0.6V
耗散功率Pd Power Dissipation	1.14W
Description & Applications	N-Channel 30-V (D-S) MOSFET Trench FET Power MOSFET Applications Li-lon Battery Protection
描述与应用	N沟道30-V（D-S）的MOSFET沟槽FET功率MOSFET 应用锂离子电池保护

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