SI3905DV-T1 Complex FET -8V -2.5A SOT-163/SOT23-6/TSOP-6 marking 5|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI3905DV-T1 Complex FET -8V -2.5A SOT-163/SOT23-6/TSOP-6 marking 5

Model：SI3905DV-T1
Mark / screen / code / typing：5
Manufacturer：
Date Code：05+
Package：SOT-163/SOT23-6/TSOP-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-8V
最大栅源极电压Vgs(±) Gate-Source Voltage	-8V
最大漏极电流Id Drain Current	-2.5A
源漏极导通电阻Rds Drain-Source On-State Resistance	265mΩ@ VGS = -1.8V, ID = -1A
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45V
耗散功率Pd Power Dissipation	1.15W
Description & Applications	Dual P-Channel 8-V (D-S) MOSFET
描述与应用	双P沟道 8-V（D-S）的MOSFET

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