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SI5904DC-T1-E3 Complex FET 20V 3.1A 1206-8/vs-8 marking CB5AA power MOSFET

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Product description
最大源漏极电压Vds
Drain-Source Voltage		20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		3.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance		143mΩ@ VGS =2.5V, ID =2.3A
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.6~1.5V
耗散功率Pd
Power Dissipation		1.1W
Description & ApplicationsDual N-Channel 2.5-V (G-S) MOSFET FEATURES Trench FET Power MOSFET 2.5-V Rated
描述与应用双N沟道2.5-V（G-S）的MOSFET 特点 沟槽FET功率MOSFET 2.5 V额定
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