SI5904DC-T1-E3 Complex FET 20V 3.1A 1206-8/vs-8 marking CB5AA power MOSFET|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI5904DC-T1-E3 Complex FET 20V 3.1A 1206-8/vs-8 marking CB5AA power MOSFET

Model：SI5904DC-T1-E3
Mark / screen / code / typing：CB5AA
Manufacturer：
Date Code：05NOPB
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V
最大漏极电流Id Drain Current	3.1A
源漏极导通电阻Rds Drain-Source On-State Resistance	143mΩ@ VGS =2.5V, ID =2.3A
开启电压Vgs（th） Gate-Source Threshold Voltage	0.6~1.5V
耗散功率Pd Power Dissipation	1.1W
Description & Applications	Dual N-Channel 2.5-V (G-S) MOSFET FEATURES Trench FET Power MOSFET 2.5-V Rated
描述与应用	双N沟道2.5-V（G-S）的MOSFET 特点沟槽FET功率MOSFET 2.5 V额定

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