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SMBTA42 NPN Transistors(BJT) 300V 500mA/0.5A 50MHz 40 500mV/0.5V SOT-23/SC-59 marking S1D high voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 40 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 360mW/0.36W |
| Description & Applications | Features • NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA92 (PNP) |
| 描述与应用 | 特点 •NPN硅晶体管高电压 •高击穿电压 •低集电极 - 发射极饱和电压 •互补类型：SMBTA92（PNP） |
