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SS5817-T SBD Schottky Barrier Diodes 20V 1A 750mV/0.75V SMA/DO-214AC marking SS5817 low forward voltage
| 反向电压Vr Reverse Voltage | 20V |
| 平均整流电流Io AVerage Rectified Current | 1A |
| 最大正向压降VF Forward Voltage(Vf) | 750mV/0.75V |
| 最大耗散功率Pd Power dissipation | |
| Description & Applications | • Metal silicon junction ,majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • High surge capability |
| 描述与应用 | •金属硅交界处，大部分载波传导 •对于表面装载应用 •过压保护保护环 •低功耗，高效率 •高电流能力，低正向压降 •高浪涌能力 |
