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SSM6J06FU MOSFET P-Channel -20V -650mA 0.4ohm SOT-363 marking KDB power managementswitch high-speed switch low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -650mA/-0.65A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.4Ω @-300mA,-4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.1V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Power Management Switch High Speed Switching Applications Small package Low on resistance : Ron = 0.5 Ω max (VGS = −4 V) Ron = 0.7 Ω max (VGS = −2.5 V) Low gate threshold voltage |
| 描述与应用 | 电源管理开关 高速开关应用 小型封装 低导通电阻RON =0.5Ω最大（VGS=-4 V） 罗恩= 0.7Ω最大（VGS=-2.5 V） 低栅极阈值电压 |
