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SSM6N15FU Complex FET 30V 100mA/0.1A SOT-363/SC70-6/UF6 marking DP high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance
4Ω@ VGS = 4V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.8~1.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type ●High Speed Switching Applications ●Analog Switching Applications ● Small package ● Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 ●高速开关应用 ●模拟开关应用 ●小型封装 ●低导通电阻RON =4.0Ω(最大)(@ VGS=4 V) RON =7.0Ω(最大值)(@ VGS= 2.5 V)
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