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SSV1MUN5312DW1T1 NPN+PNP Complex Bipolar Digital Transistor -50V/50V -100mA/100mA 100 250mW/0.25W SOT-363/SC-88/SC70-6 marking 12 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V/50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V/50V
集电极连续输出电流IC Collector Current(IC)-100mA/100mA
Q1基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)100
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation250mW/0.25W
Description & ApplicationsFeatures • Dual Bias Resistor Transistors • NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
描述与应用特点 •双偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量 •可在8毫米,7 inch/3000单位编带和卷轴 •这些器件是无铅,无卤/ BFR免费,并符合RoHS标准
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