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STD50NH02LT4 MOSFET N-Channel 30V 4A TO-252/D-PAK marking D50NH02L fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage16V
最大漏极电流Id Drain Current4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.0110Ω/OhmΩ/Ohm @2A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1V
耗散功率Pd Power Dissipation80W
Description & ApplicationsTYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
描述与应用典型的RDS(on)=3.3Ω 非常高的dv/ dt能力 100%雪崩测试 非常低的固有电容 栅极电荷最小化
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