TBB1008HMTL-E 6V 30MA SOT363 MARKING HM Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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TBB1008HMTL-E 6V 30MA SOT363 MARKING HM Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Model：TBB1008HMTL-E
Mark / screen / code / typing：HM
Manufacturer：
Date Code：04+NOPB 04+ROHS
Package：SOT-363
Standard Package：3000
Min Order：10

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Product description

Drain-Source Voltage (Vds)	6V
Vgs(±) Gate-Source Voltage
Drain Current （Id）	30MA
Rds(on) Drain-Source On-State Resistance
Vgs(th) Gate-Source Threshold Voltage
Power Dissipation (Pd)
Description & Applications	Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Technical Documentation Download	Read Online

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