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TN2010T MOSFET N-Channel 200V 120mA/0.12A SOT-323/SC-70 marking R1P fast switch/low on-resistance
最大源漏极电压Vds Drain-Source Voltage | 200V |
最大栅源极电压Vgs(±) Gate-Source Voltage | |
最大漏极电流Id Drain Current | 120mA/0.12A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.011Ω/Ohm @100mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.8-3.0V |
耗散功率Pd Power Dissipation | 350mW/0.35W |
Description & Applications | Low On-Resistance: 9.5 Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability |
描述与应用 | 低导通电阻:9.5? 二次击穿免费:220V 低功率/电压驱动 低输入和输出泄漏 优良的热稳定性 |