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TN2010T MOSFET N-Channel 200V 120mA/0.12A SOT-323/SC-70 marking R1P fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage200V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current120mA/0.12A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.011Ω/Ohm @100mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-3.0V
耗散功率Pd Power Dissipation350mW/0.35W
Description & Applications Low On-Resistance: 9.5 Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability
描述与应用低导通电阻:9.5? 二次击穿免费:220V 低功率/电压驱动 低输入和输出泄漏 优良的热稳定性
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