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TP0205AD-T1 Complex FET 20V/20V 250mA/0.25A SOT-363/SC70-6 marking C2D high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V/20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V/-8V
最大漏极电流Id
Drain Current
250mA/0.25A
源漏极导通电阻Rds
Drain-Source On-State Resistance
2Ω@ VGS = 4.5V, ID = 250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.4V~1.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsN-Channel 20-V MOSFET FEATURES: Low On-Resistance: 2.0 Ω Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation BENEFITS: Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS: Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories Battery operated Systems Solid State Relay Load/Power Switching-Cell Phones, PDA
描述与应用N沟道20-V MOSFET 特点: 低导通电阻:2.0Ω 低门槛:0.9 V(典型值) 开关速度快:35纳秒 2.5 V或更低的操作 优点: 易于驾驶开关 低失调电压(错误) 低电压工作 高速电路 低电池电压工作 应用: 驱动器:继电器,螺线管,灯,  锤,显示,记忆 电池供电系统 固态继电器 负载/功率开关手机,PDA
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