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TPCT4202 Complex FET 30V 6A FR-4 marking 202 low Rds

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
6A
源漏极导通电阻Rds
Drain-Source On-State Resistance
38mΩ@ VGS = 4.5V, ID = 3000mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5~1.2V
耗散功率Pd
Power Dissipation
510mW/0.51W
Description & ApplicationsLithium lon Battery applications Lead(Pb)-Free small footprint due to small and thin package low drain source ON resistance :Rss(ON)=30.5mΩ(typ.) Low leakage current :Isss=10uA(max)(Vds=30V) Enhancement mode:Vth=0.5~12V(Vss=10V,Is=200uA) Common drain
描述与应用锂离子电池应用 铅(以Pb计)免费 由于占地面积小,小而薄的包装 低漏源导通电阻:RSS(ON)=30.5mΩ(典型值) 低漏电流:ISSS=10uA的(最大)(VDS =30V) 增强模式:VTH =0.5〜12V(VSS= 10V,=200uA电流) 常见的漏
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