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UMF6N FET+BJTComplex FET 30V -15V marking F6 SOT-363 power management circuit

Model：UMF6N
Mark / screen / code / typing：F6
Manufacturer：
Date Code：04NOPB1RM 04+ROHS
Package：SOT-363/UMT6/SC-88
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	MOSFET N-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	30V
最大漏极电流Id Drain Current	20V
源漏极导通电阻Rds Drain-Source On-State Resistance	100mA/0.1A
开启电压Vgs（th） Gate-Source Threshold Voltage	8000mΩ@ VGS = 4V, ID = 10mA
耗散功率Pd Power Dissipation	20ms@VDS=3V，Id=10mA
Description & Applications
描述与应用	0.8~1.5V

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