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UMH4 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=100~600 R1=10KΩ 150mW/0.15W SOT-363/UMT6/SC-88/SC70-6 marking H4 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100mA
Q1基极输入电阻R1 Input Resistance(R1) 10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)  
Q1电阻比(R1/R2) Q1 Resistance Ratio  
Q2基极输入电阻R1 Input Resistance(R1) 10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)  
Q2电阻比(R1/R2) Q2 Resistance Ratio  
直流电流增益hFE DC Current Gain(hFE) 100~600
截止频率fT Transtion Frequency(fT) 250MHz
耗散功率Pc Power Dissipation 150mW/0.15W
Description & Applications Features •General purpose(dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package.
描述与应用 特点 •通用(双数字晶体管) •两个DTC114T的在EMT或UMT或SMT封装的芯片
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