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UMY1 PNP+NPN Complex Bipolar Transistor -60V/60V -150mA/150mA 120~560 SOT-353/UMT5/SC-88A marking Y1 switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-60V/60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V/50V
集电极连续输出电流IC Collector Current(IC)-150mA/150mA
截止频率fT Transtion Frequency(fT)140MHz/180MHz
直流电流增益hFE DC Current Gain(hFE)120~560
管压降VCE(sat) Collector-Emitter Saturation Voltage-500mA/400mA
耗散功率Pc Power Dissipation150mW
Description & ApplicationsFeatures •Emitter common (dual transistors) •Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. •PNP and NPN transistors have common emitters. •Mounting cost and area can be cut in half.
描述与应用特点 •发射极普通的(双晶体管) •在EMT或UMT或SMT封装包括一个2SA1037AK的2SC2412K晶体管。 •PNP和NPN晶体管有共同的发射器。 •安装成本和面积可减少一半。
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