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UN221F NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 4.7k 10k SOT-23/SC-59 marking 8O digital circuit application

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≤2999
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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.47
直流电流增益hFE DC Current Gain(hFE)30
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsSilicon NPN epitaxial planer transistr For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
描述与应用NPN硅外延平面晶体管的 用于数字电路 特性 成本可降低通过减员设备和 减少部件的数量。 迷你型包装,使瘦身的设备和 通过自动插入磁带包装盒包装
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