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UN521D NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 47k 10k SOT-323/SC-70 marking 80 digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio4.7
直流电流增益hFE DC Current Gain(hFE)30
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsSilicon NPN epitaxial planer transistr For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
描述与应用NPN硅外延平面晶体管的 用于数字电路 特性 成本可降低通过减员设备和 减少部件的数量。 迷你型包装,使瘦身的设备和 通过自动插入磁带包装盒包装
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