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UP0331200L NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA 60 SOT-553 marking 4P switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
截止频率fT Transtion Frequency(fT)150MHz/80MHz
直流电流增益hFE DC Current Gain(hFE)60
管压降VCE(sat) Collector-Emitter Saturation Voltage250mV/-250mV
耗散功率Pc Power Dissipation125mW
Description & ApplicationsFeatures • Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half.
描述与应用特点 •NPN硅外延平面型(TR1)硅PNP外延平面型(TR2) •两个要素纳入一个包(内置电阻晶体管) •减少安装面积和汇编一半的费用。
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