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UP0487C0VL Complex FET 20V 100mA/0.1A SOT-563 marking 2V high-speed switch built-in protection diode

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance
4Ω@ VGS = 4V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.4~1.3V
耗散功率Pd
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon N-channel MOSFET For switching ■ Features •High-speed switching • Incorporating a built-in gate protection-diode •Two elements incorporated int one package(Each transistor is separated) •Mini type package, reduction of the mounting area and assembly cost
描述与应用硅N沟道MOSFET 对于开关 ■特点 •高速开关 •集成了内置栅极保护二极管 •两个元素注册成立的第一个包(每个晶体管分离) •迷你型包装,减少安装面积和装配成本
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