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UP0487C0VL Complex FET 20V 100mA/0.1A SOT-563 marking 2V high-speed switch built-in protection diode
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 4Ω@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率Pd Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon N-channel MOSFET For switching ■ Features •High-speed switching • Incorporating a built-in gate protection-diode •Two elements incorporated int one package(Each transistor is separated) •Mini type package, reduction of the mounting area and assembly cost |
| 描述与应用 | 硅N沟道MOSFET 对于开关 ■特点 •高速开关 •集成了内置栅极保护二极管 •两个元素注册成立的第一个包（每个晶体管分离） •迷你型包装，减少安装面积和装配成本 |
