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US5U1 complex FET MOSFET+schottky diode 30V 1.5A 500mA/0.5A 0.47V SOT-353/SC70-5/TUMT5 marking U01 high-speed switch/low on-resistance/low drive voltage
最大源漏极电压Vds Drain-Source Voltage | N沟道 N-Channel |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 12V |
源漏极导通电阻Rds Drain-Source On-State Resistance | 1.5A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 240mΩ@ VGS = 4.5V, ID = 1.5A |
耗散功率Pd Power Dissipation | 0.5~1.5V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 20V |
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