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XN0439000L NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 500mA/-500mA 60/20 300mW/0.3W SOT-163/SC-74/SOT23-6 marking DY switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)500mA/-500mA
Q1基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)0.27KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)5KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.054
直流电流增益hFE DC Current Gain(hFE)60/20
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures •silicon NPN epitaxial planar type(Tr1) silicon PNP epitaxial planar type(Tr2) •two elements incorporated into one package (transistors with built-in resistor) •reduction of the mounting area and assembly cost by one half
描述与应用特点 •NPN硅外延平面型(TR1)硅PNP外延平面型(TR2) •两个元素纳入一个封装中(内置电阻的晶体管) •减少安装面积和装配成本的一半
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