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XN1A312 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 60 300mW/0.3W SOT-153/SC-74A/SOT23-5 marking 4P switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)60
截止频率fT Transtion Frequency(fT)150MHz/80MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures • Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) • Two elements incorporated into one package.(Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. • For switching/digital circuits
描述与应用特点 •NPN硅外延平面型(TR1)硅PNP外延平面型(TR2) •两个要素纳入一包装(发射极耦合晶体管内置电阻)。 •减少安装面积和汇编一半的费用。 •对于开关/数字电路
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