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XN6216 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A R1=4.7KΩ HEF=160~460 300mW/0.3W SOT-163/SC-74/SOT23-6 marking 8Y switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  100MA
Input Resistance(R1)  4.7KΩ
Base-Emitter Resistance(R2)  
Base-Emitter Input Resistance Ratio (R1/R2)  
DC Current Gain(hFE)  160~460
Transtion Frequency(fT)  150MHZ
Power Dissipation (Pd)  300MW/0.3W
Description & Applications  Silicon NPN epitaxial planer transistor
For switching/digital circuits
UN1216 × 2 
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