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XP4601 NPN+PNP Complex Bipolar Transistor 60V/-60V 100mA/-100mA 160~460 SOT-363/SC-88 marking 5C switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 60V/-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V/-50V
集电极连续输出电流IC Collector Current(IC) 100mA/-100mA
截止频率fT Transtion Frequency(fT) 150MHz/80MHz
直流电流增益hFE DC Current Gain(hFE) 160~460/160~460
管压降VCE(sat) Collector-Emitter Saturation Voltage 100mV/-300mV
耗散功率Pc Power Dissipation 150mW
Description & Applications Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification 2SD0601A(2SD601A) + 2SB0709A(2SB709A)
描述与应用

特点 •NPN硅外延的刨床晶体管(TR1)硅PNP外延刨床晶体管的(TR2) •两个要素纳入一包装 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大

2SD0601A(2SD601A) + 2SB0709A(2SB709A)

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