Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
RTF015N03 MOSFET N-Channel 30V 1.5A SOT-323/SC-70/UMT3 marking PP ESD protection gate
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.24Ω/Ohm @1.5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Switching (30V, 2.5A) Silicon N-channel MOS FET Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT3) . |
| 描述与应用 | 开关（30V，2.5A） 硅N沟道MOS FET 低导通电阻。 内置G-S的保护二极管 小和表面贴装封装 |
