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mmbt2222aw NPN Transistors(BJT) 75V 600mA/0.6a 300Mhz 75~375 0.3V~1V SOT-323/SC-70 marking P12
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 300Mhz |
| 直流电流增益hFE DC Current Gain(hFE) | 75~375 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 0.3V~1V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • Pb−Free Package is Available |
| 描述与应用 | 这些晶体管是专为通用放大器 的应用程序。他们被安置SOT-323/SC-70包 是专为低功率表面贴装应用。 特点 •无铅包装是可用 |
