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TPCF8402 Complex FET 30V/-30V 4A/-3.2A 1206-8/vs-8 marking F6B motor drive DC/DC converter
| 最大源漏极电压Vds Drain-Source Voltage | 30V/-30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V/20V |
| 最大漏极电流Id Drain Current | 4A/-3.2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 72mΩ@ VGS = -10V, ID = -1600mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8~-2.0V |
| 耗散功率Pd Power Dissipation | 530mW/0.53W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) • Enhancement-mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) |
| 描述与应用 | 东芝场效应晶体管的硅P，N沟道MOS型（U-MOS IV/ U-MOS III） 便携式设备的应用 电机驱动应用 DC-DC转换器应用 •低漏源导通电阻：P通道的RDS（ON）= 60mΩ（典型值） N沟道的RDS（ON）=38mΩ（典型值） •高正向转移导纳：P通道| YFS|= 5.9 S（典型值） N沟道YFS| =6.8 S（典型值） •低漏电流：P沟道IDSS= -10μA（VDS=-30 V） N沟道IDSS=10μA（VDS=30 V） •增强模式 ：P沟道Vth= -0.8到-2.0 V（VDS= -10 V，ID=-1MA） N沟道Vth =1.3〜2.5 V（VDS=10V，ID=1毫安） |
