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HAT2240C N MOSFET 60V 2.5A SOT363 MARKING UK Low on-resistance 2.5 V gate drive device
| Drain-Source Voltage （Vds） | 60V |
|
Vgs(±) Gate-Source Voltage |
12V |
| Drain Current （Id） | 2.5A |
| Drain-Source On-State （Rds） | RDS(on) = 75 mΩ typ.(at VGS = 4.5 V)
|
|
Vgs （th） Gate-Source Threshold Voltage |
|
| Power dissipation （Pd） | 800MW/0.8W |
| Description & Applications | Silicon N Channel MOS FET
Power Switching
• Low on-resistance
RDS(on) = 75 mΩ typ.(at VGS = 4.5 V)
• Low drive current
• High density mounting
• 2.5 V gate drive device
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