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HAT2240C N MOSFET 60V 2.5A SOT363 MARKING UK Low on-resistance 2.5 V gate drive device

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Product description
Drain-Source Voltage （Vds）  60V

Vgs(±)

Gate-Source Voltage

  12V
Drain Current （Id）  2.5A
Drain-Source On-State （Rds）  RDS(on) = 75 mΩ typ.(at VGS = 4.5 V) 
 

Vgs （th）

Gate-Source Threshold Voltage

  
Power dissipation （Pd）  800MW/0.8W
Description & Applications  Silicon N Channel MOS FET 
Power Switching 
 
• Low on-resistance 
RDS(on) = 75 mΩ typ.(at VGS = 4.5 V) 
• Low drive current 
• High density mounting 
• 2.5 V gate drive device 
 
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