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HAT2266H N MOSFET 60V 30A LFPAK 代码 2266 Low on-resistance Capable of 4.5 V gate drive

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Product description
Drain-Source Voltage （Vds）  60V

Vgs(±)

Gate-Source Voltage

  20V
Drain Current （Id）  30A
Drain-Source On-State （Rds）  RDS(on) = 9.2 mΩ typ. (at VGS = 10 V) 
 

Vgs （th）

Gate-Source Threshold Voltage

  
Power dissipation （Pd）  23W
Description & Applications  Silicon N Channel Power MOS FET 
Power Switching
• High speed switching 
• Capable of 4.5 V gate drive 
• Low drive current 
• High density mounting 
• Low on-resistance
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