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2SK3290BNTL MOSFET N-Channel 30V 500mA/0.5A SOT-23/SC-59 marking BN fast switch/low on-resistance/4V gate driver

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.455Ω/Ohm @250mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3-2.3V
耗散功率Pd Power Dissipation400mW/0.4W
Description & ApplicationsSilicon N Channel MOS FET High Speed Switching Features Silicon N Channel MOS FET High Speed Switching Low on-resistance RDS= 0.455 Ω typ (VGS=10V , ID = 250 mA) RDS=0.9 Ω typ(VGS= 4 V , ID = 100 mA) 4 V gate drive device Small package (MPAK)
描述与应用硅N沟道MOS FET 高速开关 特性 硅N沟道MOS FET 高速开关 低导通电阻 RDS=0.455Ω(典型值)(VGS= 10V,ID=250毫安) RDS=0.9Ω(典型值)(VGS=4 V,ID= 100毫安) 4 V栅极驱动装置 小型封装(MPAK)
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