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PMV45EN MOSFET N-Channel 30V 5.4A SOT-23/SC-59 marking W4N fast switch/DC/DC/very low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | µTrenchMOS™ enhanced logic level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Ultra low level threshold Surface mount package. |
| 描述与应用 | μTrenchMOS™增强逻辑电平FET 描述 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™技术 超低水平阈值 表面贴装封装 |
