SI1900DL-T1-E3 Complex FET 30V 590mA/0.59A SOT-363/SC70-6 marking PBS|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI1900DL-T1-E3 Complex FET 30V 590mA/0.59A SOT-363/SC70-6 marking PBS

Model：SI1900DL-T1-E3
Mark / screen / code / typing：PBS
Manufacturer：
Date Code：06NOPB 06+PB
Package：SOT-363/SC70-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	590mA/0.59A
源漏极导通电阻Rds Drain-Source On-State Resistance	700mΩ@ VGS =4.5V, ID =200mA
开启电压Vgs（th） Gate-Source Threshold Voltage	1V
耗散功率Pd Power Dissipation	270mW/0.27W
Description & Applications	Dual N-Channel 30-V (D-S) MOSFET
描述与应用	双N沟道30-V（D-S）的MOSFET

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