KTC812T-B NPN+NPN Complex Bipolar Transistor 50V 0.3A HEF=350~1200 SOT-163/TS6 marking MB switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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KTC812T-B NPN+NPN Complex Bipolar Transistor 50V 0.3A HEF=350~1200 SOT-163/TS6 marking MB switch and digital circuit application

Model：KTC812T-B
Mark / screen / code / typing：MB
Manufacturer：
Date Code：06+NOPB
Package：SOT-163/TS6
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	50V
V(BR) CEO Collector-Emitter Voltage	20V
Collector Current(IC)	300MA/0.3A
Transtion Frequency(fT)	30MHZ
DC Current Gain(hFE)	350~1200
VCE (sat) Collector-Emitter Saturation Voltage	0.3V
Power Dissipation （Pd）	0.9W
Description & Applications	FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA)
Technical Documentation Download	Read Online

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