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KTA2017-GR PNP transistors（BJT） -120V -100mA/-0.1A 100MHz 200~400 -300mV/-0.3V SOT-323/SC-70 marking C6 low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -120V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 100mW/0.1W |
| Description & Applications | PNP epitaxial planar transistor LOW NOISE AMPLIFIER APPLICATION FEATURES High Voltage Excellent hFE Linearity High hFE Low Noise Complementary to KTC4077 |
| 描述与应用 | PNP外延平面晶体管 低噪声放大器应用 特点 高电压 优秀HFE线性 高HFE 低噪声 互补KTC4077 |
