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30C02CH NPN Transistors(BJT) 40V 700mA/0.7A 540MHz 300~800 85mV SOT-23/SC-59 marking CL low-frequency amplifier fast switch 小型马达drive

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
30V
集电极连续输出电流IC
Collector Current(IC)
700mA/0.7A
截止频率fT
Transtion Frequency(fT)
540MHz
直流电流增益hFE
DC Current Gain(hFE)
300~800
管压降VCE(sat)
Collector-Emitter Saturation Voltage
85mV
耗散功率Pc
Power Dissipation
700mW/0.7W
Description & ApplicationsNPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching,small motor drive. Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron).
描述与应用NPN平面外延硅晶体管 低频 通用放大器应用 应用 •低频放大器,高速交换,小型马达驱动。 特点 •大电流容量。 •低集电极 - 发射极饱和电压(电阻)。 RCE(sat)(典型值)=330mΩ[IC=0.7A,IB=35毫安]。 •超小封装,有利于在终端产品的小型化。 •小导通电阻(RON)。
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